The n-well collector is formed by __________

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The n-well collector is formed by __________

1.Lightly doped n-type epitaxial layer on p-Substrate

2.Heavily doped n-type epitaxial layer on p-Substrate

3.Lightly doped n-type diffused layer on p-Substrate

4.Heavily doped n-type diffused layer on p-Substrate

Posted Date:-2022-06-24 04:17:09

More MCQS Questions and answers

  1. A __________ gate gives the output as 1 only if all the inputs signals are 1.
  2. A NOR gate can be derived from ______
  3. Conversion from prefix to postfix expression can be done _______________
  4. Different parameter optimization is easily achievable in
  5. Electronic circuits that operate on one or more input signals to produce standard output _______
  6. Equalizing of rise time and fall time is possible in
  7. Evaluation of 4*5+3/2-9 in prefix notation.
  8. Evaluation of expression a/b+c*d-e in postfix notation.
  9. For minimum D consider
  10. High and low noise margins can be equalized by
  11. How many NAND gates are required to make an XOR gate?
  12. In BiCMOS inverter, the BJT used are __________
  13. In BiCMOS, the analysis of the operation of BJT is well explained by ___________
  14. In Boolean algebra, the data is a bit-representation of information consists of _________
  15. In infix to postfix conversion algorithm, the operators are associated from?
  16. In Multiplexer gate, for selecting the inputs, two bits named _____ and _____ are required generally.
  17. In OR gate for 13 numbers of inputs what are the stages possible for it?
  18. In order to make a luggage security alarm, a single _____ is used.
  19. In which logic gate the output state is usually the complement of the input state?
  20. Infix to prefix conversion can be done using __________
  21. Inverter pair delay D is given as equal to
  22. Prefix expression can be evaluated _________
  23. Rise time and fall time can be also equalized by
  24. The BiCMOS are preferred over CMOS due to ______________
  25. The Bipolar Transistor is fabricated on __________
  26. The boolean expression of an OR gate is _______
  27. The collector contact region is doped with higher concentration of n-type impurities due to __________
  28. The expression of an EXOR gate is ____________
  29. The gate which is called an inverter is called _________
  30. The gate which is used to reverse the output obtained is _____
  31. The high current driving capability of the BiCMOS is due to __________
  32. The n-well collector is formed by __________
  33. The n-well created for Bipolar Transistor in BiCMOS is used as __________
  34. The transistors used in BiCMOS are __________
  35. The universal gate that can be used to implement any Boolean expression is __________
  36. Using which component a shift register is implemented?
  37. What is the postfix expression of (A+B)-C*(D/E))+F?
  38. What is the postfix expression of 9+3*5/(10-4)?
  39. What is the postfix expression of the given expression, (2*4-(5+7/3^4)-8)10?
  40. What is the work of BJT in BiCMOS?
  41. What should be done when a left parenthesis ‘(‘ is encountered?
  42. When logic gates are connected to form a gating/logic network it is called as a ______________ logic circuit.
  43. When Zp.d. or Zp.u. increases, delay
  44. Which of the following gate will give a 0 when both of its inputs are 1?
  45. Which of the following gates is used to implement a logical conditional?
  46. Which of the following gates is used to implement a logical conditional?
  47. Which of the following is an infix expression?
  48. Which of the following is built exclusively from NOR gate?
  49. Which of the following is the drawback of the BiCMOS circuits?
  50. Which of the following statement is incorrect with respect to infix to postfix conversion algorithm?
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