The energy-level occupation for a semiconductor in thermal equilibrium is described by the __________

  1. Home

Question:
The energy-level occupation for a semiconductor in thermal equilibrium is described by the __________

1.Boltzmann distribution function

2.Probability distribution function

3.Fermi-Dirac distribution function

4.Cumulative distribution function

Posted Date:-2022-05-05 22:15:28

More MCQS Questions and answers

  1. ________ couplers combine the different wavelength optical signal onto the fiber or separate the different wavelength optical signal output from the fiber.
  2. _______________ method does not require a leaky mode correction factor or equal mode excitation.
  3. _________________ is used when the optical emission results from the application of electric field.
  4. A _____________ coupler comprises a number of cascaded stages, each incorporating three or four-port FBT couplers to obtain a multiport output.
  5. A BH can have anything from a single electron to several electrons.
  6. A double-channel planar buried hetero-structure (DCP BH) has a planar active region, the confinement material is?
  7. A four-port FBT coupler has 60μW optical power launched into port one. The output powers at ports 2, 3, 4 are 0.0025, 18, and 22 μW respectively. Find the split ratio?
  8. A four-port multimode fiber FBT coupler has 50 μW optical power launched into port 1. The measured output power at ports 2,3 and 4 are 0.003, 23.0 and 24.5 μW respectively. Determine the excess loss.
  9. A number of three-port single-mode fiber couplers are used in the fabrication of a ladder coupler with 16 output ports. The three-port couplers each have an excess loss of 0.2 dB along with a splice loss of 0.1 dB at the interconnection of each stage. Determine the excess loss.
  10. A perfect semiconductor crystal containing no impurities or lattice defects is called as __________
  11. As compared to planar LED structure, Dome LEDs have ______________ External power efficiency ___________ effective emission area and _____________ radiance.
  12. Better confinement of optical mode is obtained in __________
  13. Buried hetero-junction (BH) device is a type of _____________ laser where the active volume is buried in a material of wider band-gap and lower refractive index.
  14. Calculate the splitting loss if a 30×30 port multimode fiber star coupler has 1 mW of optical power launched into an input port.
  15. Couplers insertion loss is same as that of excess loss.
  16. DH surface emitter generally give ____________
  17. Dot-in-well device is also known as __________
  18. How many fabrication techniques are used for 3 port fiber couplers?
  19. How many manufacturing methods are used for producing multimode fiber star couplers?
  20. How many types of multiport optical fiber couplers are available at present?
  21. In a multimode fiber, much of light coupled in the fiber from an LED is ____________
  22. In Buried hetero-junction (BH) lasers, the optical field is confined within __________
  23. In multimode injection lasers, the construction of current flow to the strip is obtained in structure by __________
  24. In optical fiber communication _____________ major types of LED structures are used.
  25. In surface emitter LEDs, more advantage can be obtained by using ____________
  26. Internal absorption in DH surface emitter Burros type LEDs is ____________
  27. It is a device that distributes light from a main fiber into one or more branch fibers.
  28. Mesa structured SLEDs are used ____________
  29. Multi-quantum devices have superior characteristics over __________
  30. Optical fiber couplers are also called as ________________
  31. Problems resulting from parasitic capacitances can be overcome __________
  32. Quantum well lasers are also known as __________
  33. Quantum well lasers are providing high inherent advantage over __________
  34. Some refractive index variation is introduced into lateral structure of laser.
  35. Strip geometry of a device or laser is important.
  36. The _______ method is the most commonly used method for the determination of the fiber refractive index profile.
  37. The active layer of E-LED is heavily doped with ____________
  38. The amount of radiance in planer type of LED structures is ____________
  39. The energy-level occupation for a semiconductor in thermal equilibrium is described by the __________
  40. The InGaAsP is emitting LEDs are realized in terms of restricted are ____________
  41. The majority of the carriers in a p-type semiconductor are __________
  42. The optical power coupled from one fiber to another is limited by ____________
  43. The overall power conversion efficiency of electrical lens coupled LED is 0.8% and power applied 0.0375 V. Determine optical power launched into fiber.
  44. The recombination in indirect band-gap semiconductors is slow.
  45. The techniques by Burros and Dawson in reference to homo structure device is to use an etched well in GaAs structure.
  46. What is done to create an extrinsic semiconductor?
  47. What is the strip width of injection laser?
  48. When considering source-to-fiber coupling efficiencies, the ________ is an important parameter than total output power.
  49. Which impurity is added to gallium phosphide to make it an efficient light emitter?
  50. Which is the most common method for manufacturing couplers?
Search
R4R Team
R4Rin Top Tutorials are Core Java,Hibernate ,Spring,Sturts.The content on R4R.in website is done by expert team not only with the help of books but along with the strong professional knowledge in all context like coding,designing, marketing,etc!