# Engineering/Microwave Engineering Mcq Set 3 Sample Test,Sample questions

## Question: ` If the critical field in a Gunn diode oscillator is 3.2 KV/cm and effective length is 20 microns, then the critical voltage is:`

1. 3.2 V

2.6.4 V

3.2.4 V

4.6.5 V

Posted Date:-2022-02-17 16:38:21

## Question: ` If the length of the intrinsic region in IMPATT diode is 2 Âµm and the carrier drift velocity are 107 cm/s, then the nominal frequency of the diode is:`

1.12 GHz

2.25 GHz

3.30 GHz

4.24 GHz

Posted Date:-2022-02-17 16:28:33

## Question: ``` If the RMS peak current in an IMPATT diode is 700 mA and if DC input power is 6 watt, with the load resistance being equal to 2.5 Î©, the efficiency of the diode is: ```

1.10.1 %

2.10.21 %

3.12 %

4.15.2 %

Posted Date:-2022-02-17 16:36:57

## Question: ``` In order to achieve high current density, a compromise in _______is made in a TRAPATT diode. ```

1.Gain

2.Size

3.Operating frequency

4.No compromise is made on any of the parameter

Posted Date:-2022-02-17 18:00:53

## Question: ` The frequency of oscillation in Gunn diode is given by:`

1. vdom/ Leff

2.Leff/ Vdom

3.Leff/ WVdom

4.None of the mentioned

Posted Date:-2022-02-17 13:23:11

## Question: ``` The resonant frequency of an IMPATT diode is given by: ```

1.Vd/2l

2.Vd/l

3.Vd/2Ï€l

4.Vdd/4Ï€l

Posted Date:-2022-02-17 16:18:50

## Question: `. When either a voltage or current is applied to the terminals of bulk solid state compound GaAs, a differential ______ is developed in that bulk device.`

1.negative resistance

2.positive resistance

3.negative voltage

4.None of the mentioned

Posted Date:-2022-02-17 13:14:50

## Question: ```A major disadvantage of TRAPATT diode is: ```

1.Fabrication is costly

2.Low operational bandwidth

3.Low gain

4.High noise figure

Posted Date:-2022-02-17 18:01:57

## Question: ```As the area of rectifying contact goes on increasing, the forward resistance of the Schottky diode: ```

1.Increases

2.Decreases

3.Remains unchanged

4. None of the mentioned

Posted Date:-2022-02-17 17:59:09

## Question: ```BJTs are bipolar junction transistors. The name bipolar is given because: ```

1.they are made of n type and p type semiconductor

2. they have holes as charge carriers

3. they have electrons as charge carriers

4.none of the mentioned

Posted Date:-2022-02-17 18:06:40

## Question: `Classical p-n junction diode cannot be used for high frequency applications because of:`

1.High bias voltage

2.High junction capacitance

3.Frequency sensitive

4.High forward biased current

Posted Date:-2022-02-17 17:57:40

## Question: ```GaAs is used in fabricating Gunn diode. Gunn diode is: ```

1.bulk device

2.sliced device

3.made of different type of semiconductor layers

4.none of the mentioned

Posted Date:-2022-02-17 13:13:26

## Question: `If the length of the intrinsic region in IMPATT diode is 2 Âµm and the carrier drift velocity are 107 cm/s, then the drift time of the carrier is:`

1.0-11 seconds

2. 2Ã—10-11 seconds

3.2.5Ã—10-11 seconds

4.None of the mentioned

Posted Date:-2022-02-17 16:26:11

## Question: ```Schottky barrier diode is a sophisticated version of the point contact ______________ ```

1.Germanium diode

2.Silicon crystal diode

3.GaAs diode

4.None of the mentioned

Posted Date:-2022-02-17 17:58:25

## Question: ```The free electron concentration in N-type GaAs is controlled by: a)```

1. effective doping

2.bias voltage

3.drive current

4.None of the mentioned

Posted Date:-2022-02-17 13:17:37

## Question: ```The mode of operation in which the Gunn diode is not stable is: d)```

1.Gunn oscillation mode

2. limited space charge accumulation mode

3.stable amplification mode

4. bias circuit oscillation mode

Posted Date:-2022-02-17 13:19:43

## Question: ```The most important functional unit of a spectrum analyzer is: ```

1. Mixer

2.IF amplifier

4.None of the mentioned

Posted Date:-2022-02-17 18:04:14

## Question: ```The number of modes of operation for n type GaAs is: ```

1.two

2.three

3.four

4.five

Posted Date:-2022-02-17 13:16:20

## Question: ```The number of semiconductor layers in a TRAPATT diode is: ```

1.Two

2.Three

3.Four

4.One

Posted Date:-2022-02-17 18:00:04

## Question: ```The number of semiconductor layers in IMPATT diode is: ```

1.two

2.three

3.four

4. none of the mentioned

Posted Date:-2022-02-17 16:15:34

## Question: ```To prevent an IMPATT diode from burning, a constant bias source is used to maintain _______ at safe limit. ```

1. average current

2.average voltage

3.average bias voltage

4. average resistance

Posted Date:-2022-02-17 16:13:29

## Question: ```When a reverse bias voltage exceeding the breakdown voltage is applied to an IMPATT diode, it results in: ```

1.avalanche multiplication

2.break down of depletion region

3.high reverse saturation current

4.None of the mentioned

Posted Date:-2022-02-17 13:24:11

## Question: ```When the applied electric field exceeds the threshold value, electrons absorb more energy from the field and become: ```

1. hot electrons

2.cold electrons

3.emission electrons

4.None of the mentioned

Posted Date:-2022-02-17 13:12:11

## Question: `_________ gives a frequency domain representation of a signal, displaying the average power density versus frequency.`

1.CRO

2.Oscilloscope

3.Spectrum analyzer

4.Network analyzer

Posted Date:-2022-02-17 18:03:03

## More MCQS

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