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Question: 
 If the critical field in a Gunn diode oscillator is 3.2 KV/cm and effective length is 20 microns, then the critical voltage is:

1. 3.2 V

2.6.4 V

3.2.4 V

4.6.5 V

Posted Date:-2022-02-17 09:38:21

Question: 
 If the length of the intrinsic region in IMPATT diode is 2 µm and the carrier drift velocity are 107 cm/s, then the nominal frequency of the diode is:

1.12 GHz

2.25 GHz

3.30 GHz

4.24 GHz

Posted Date:-2022-02-17 09:28:33

Question: 
 If the RMS peak current in an IMPATT diode is 700 mA and if DC input power is 6 watt, with the load resistance being equal to 2.5 Ω, the efficiency of the diode is:

1.10.1 %

2.10.21 %

3.12 %

4.15.2 %

Posted Date:-2022-02-17 09:36:57

Question: 
 In order to achieve high current density, a compromise in _______is made in a TRAPATT diode.

1.Gain

2.Size

3.Operating frequency

4.No compromise is made on any of the parameter

Posted Date:-2022-02-17 11:00:53

Question: 
 The frequency of oscillation in Gunn diode is given by:

1. vdom/ Leff

2.Leff/ Vdom

3.Leff/ WVdom

4.None of the mentioned

Posted Date:-2022-02-17 06:23:11

Question: 
 The resonant frequency of an IMPATT diode is given by:

1.Vd/2l

2.Vd/l

3.Vd/2πl

4.Vdd/4πl

Posted Date:-2022-02-17 09:18:50

Question: 
_________ gives a frequency domain representation of a signal, displaying the average power density versus frequency.

1.CRO

2.Oscilloscope

3.Spectrum analyzer

4.Network analyzer

Posted Date:-2022-02-17 11:03:03

Question: 
. When either a voltage or current is applied to the terminals of bulk solid state compound GaAs, a differential ______ is developed in that bulk device.

1.negative resistance

2.positive resistance

3.negative voltage

4.None of the mentioned

Posted Date:-2022-02-17 06:14:50

Question: 
A major disadvantage of TRAPATT diode is:

1.Fabrication is costly

2.Low operational bandwidth

3.Low gain

4.High noise figure

Posted Date:-2022-02-17 11:01:57

Question: 
As the area of rectifying contact goes on increasing, the forward resistance of the Schottky diode:

1.Increases

2.Decreases

3.Remains unchanged

4. None of the mentioned

Posted Date:-2022-02-17 10:59:09

Question: 
BJTs are bipolar junction transistors. The name bipolar is given because:

1.they are made of n type and p type semiconductor

2. they have holes as charge carriers

3. they have electrons as charge carriers

4.none of the mentioned

Posted Date:-2022-02-17 11:06:40

Question: 
Classical p-n junction diode cannot be used for high frequency applications because of:

1.High bias voltage

2.High junction capacitance

3.Frequency sensitive

4.High forward biased current

Posted Date:-2022-02-17 10:57:40

Question: 
GaAs is used in fabricating Gunn diode. Gunn diode is:

1.bulk device

2.sliced device

3.made of different type of semiconductor layers

4.none of the mentioned

Posted Date:-2022-02-17 06:13:26

Question: 
If the length of the intrinsic region in IMPATT diode is 2 µm and the carrier drift velocity are 107 cm/s, then the drift time of the carrier is:

1.0-11 seconds

2. 2×10-11 seconds

3.2.5×10-11 seconds

4.None of the mentioned

Posted Date:-2022-02-17 09:26:11

Question: 
Schottky barrier diode is a sophisticated version of the point contact ______________

1.Germanium diode

2.Silicon crystal diode

3.GaAs diode

4.None of the mentioned

Posted Date:-2022-02-17 10:58:25

Question: 
The free electron concentration in N-type GaAs is controlled by:
a)

1. effective doping

2.bias voltage

3.drive current

4.None of the mentioned

Posted Date:-2022-02-17 06:17:37

Question: 
The mode of operation in which the Gunn diode is not stable is:

d)

1.Gunn oscillation mode

2. limited space charge accumulation mode

3.stable amplification mode

4. bias circuit oscillation mode

Posted Date:-2022-02-17 06:19:43

Question: 
The most important functional unit of a spectrum analyzer is:

1. Mixer

2.IF amplifier

3. Sensitive receiver

4.None of the mentioned

Posted Date:-2022-02-17 11:04:14

Question: 
The number of modes of operation for n type GaAs is:

1.two

2.three

3.four

4.five

Posted Date:-2022-02-17 06:16:20

Question: 
The number of semiconductor layers in a TRAPATT diode is:

1.Two

2.Three

3.Four

4.One

Posted Date:-2022-02-17 11:00:04

Question: 
The number of semiconductor layers in IMPATT diode is:

1.two

2.three

3.four

4. none of the mentioned

Posted Date:-2022-02-17 09:15:34

Question: 
To prevent an IMPATT diode from burning, a constant bias source is used to maintain _______ at safe limit.

1. average current

2.average voltage

3.average bias voltage

4. average resistance

Posted Date:-2022-02-17 09:13:29

Question: 
When a reverse bias voltage exceeding the breakdown voltage is applied to an IMPATT diode, it results in:

1.avalanche multiplication

2.break down of depletion region

3.high reverse saturation current

4.None of the mentioned

Posted Date:-2022-02-17 06:24:11

Question: 
When the applied electric field exceeds the threshold value, electrons absorb more energy from the field and become:

1. hot electrons

2.cold electrons

3.emission electrons

4.None of the mentioned

Posted Date:-2022-02-17 06:12:11

Posted on by R4R Team

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